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Recent Patents on Nanotechnology

Editor-in-Chief

ISSN (Print): 1872-2105
ISSN (Online): 2212-4020

Recent Progress in p-Type Doping and Optical Properties of SnO2 Nanostructures for Optoelectronic Device Applications

Author(s): Shusheng Pan and Guanghai Li

Volume 5, Issue 2, 2011

Page: [138 - 161] Pages: 24

DOI: 10.2174/187221011795909161

Price: $65

Abstract

SnO2 semiconductor is a host material for ultraviolet optoelectronic devices applications because of its wide band gap (3.6 eV), large exciton binding energy (130 meV) and exotic electrical properties and has attracted great interests. The renewed interest is fueled by the availability of exciton emission in nanostructures, high quality epitaxial films, p-type conductivity, and heterojunction light emitting devices. This review begins with a survey of the patents and reports on the recent developments on SnO2 films. We focus on the epitaxial growth, p-type doping and photoluminescence properties of SnO2 films and nanostructures, including the achievements in our group. Finally, the applications of SnO2 nanostructures to optoelectronic devices including heterojunction light emitting devices, photodetectors and photovoltaic cells will be discussed.

Keywords: Epitaxial growth, light emitting diodes, nanostructures, optical properties, photoluminescence, optoelectronic devices, p-type doping, SnO2, Optical Properties of SnO2 Nanostructures, Optoelectronic Device Applications, lithium battery, Vapor Deposition Technique, Epitaxial Orientation, Inelastic scattering process, Tin interstitials, Band-acceptor, Neutral donor bounded exciton, Deep trap, surfactant PVP and SnO2, Impurity Emission


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