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Review Article

Journey of MOSFET from Planar to Gate All Around: A Review

Author(s): Krutideepa Bhol, Biswajit Jena and Umakanta Nanda*

Volume 16, Issue 4, 2022

Published on: 19 July, 2021

Page: [326 - 332] Pages: 7

DOI: 10.2174/1872210515666210719102855

Price: $65

Abstract

With the continuous miniaturization in device dimension to reach the expectation raised by semiconductor users, the shape and size of the MOSFET are changing periodically. The journey started in the year 1960, reached the milestone, and still going on to create history. Due to continuous downscaling, the device dimensions have already reached the critical limit and further miniaturization is a challenge. As a result of which some unwanted effects were raised unknowingly to suppress the device performances while entering into nanoscale. To overcome these kinds of barriers, different device architectures were proposed to keep the journey on. This paper focused on those types of advanced structures in MOSFET, which kept Moore’s law alive.

Keywords: MOSFET, NANO, GAA, FinFET, SCE, quantum.

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