Introduction to Strain Metrology for Semiconductors
Pp. 4-14 (11)
Terence K.S. Wong
Two conventional strain measurement methods, namely the strain gauge and the Moire
technique are first discussed. The origin of interest in strain effects in semiconductors is introduced in a
chronological sequence beginning with stressed induced defects near isolation structures and the present
intentional use of strain in the channel of field effect transistors as a performance booster. The need and
the lack of precise strain measurement methods at the submicron and nanoscale are emphasized. Strain
measurement for microelectromechanical device materials is also discussed.
Strain metrology, Nanoelectronics, Strained silicon, Microelectromechanical systems.
Division of Microelectronics School of Electrical and Electronic Engineering Nanyang Technological University