This paper introduces a method using contact mode Atomic Force Microscopy (AFM) for qualification of AgPd thick films. The described measurement technique is capable of detecting very small concentration of surface contaminants, which can be crucial if the thick film conductor is directly bonded by ultrasonic welding. During this welding process an aluminum wire is pressed vertically onto the thick film surface; an applied horizontal vibration forms the Alwire-AgPdfilm bonded interface. The introduced method is based on a known artifact of AFM, which is a well-defined image distortion in contact mode height data and AFM deflection signal. In our case, an image distortion carries information about sample-tip interaction, this attractive/repulsive force changes if the tip moves on a contaminated surface. We suggest a short, moderate temperature annealing in order to clean the surface from previously observed contaminations. During the experiments, the optimal parameters of annealing were also determined; these parameters have been validated by pull tests.
Keywords: Atomic force microscopy, thick film, ultrasonic wire bonding, microscopy, ultrasonic, AgPd thick films, Ultrasonic bonding, MCMs, COB, stick-and-slip, electron microscopy, IC, Screen printing, lift-off, cantilever, piezo-scanner, Veeco's MSCT probes, probe, FE-SEM, Annealing, Relative frequency, PID, SEM-EPMA, Spectrometry, semiconductors, pull test
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