Linear and Nonlinear Gain of Sb-Based Quantum-Dot Semiconductor Optical Amplifiers
B. Al-Nashy and Amin H. Al-Khursan
Affiliation: Nassiriya Nanotechnology Research Laboratory (NNRL), Science College, Thi-Qar University, Nassiriya, Iraq.
Keywords: Quantum dot (QD), semiconductor optical amplifier (SOA), Sb-mole fraction, spectral hole burning (SHB), slowlight, dot, semiconductor, (IR), QD-SOA, (SHB), (TCDD), TE polarization, WL, quasi-Fermi energy, Sb-fraction, GaSb, wavelength, (FWHM), EIT
Linear and nonlinear gain spectra are studied in Sb-based quantum-dot (QD) semiconductor optical amplifiers (SOAs). Quantum size, homogenous linewidth and effect of Sb-composition in the QD, wetting and barrier layers are studied also. InSb and InAs0.3Sb0.7 QD-SOAs give enough gain saturation. The study covers (1000-7000nm) wavelength range. This work covers some new patents in this field.
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