Recent Patents on Electrical Engineering

Huiyu Zhou  
Queen's University Belfast
Belfast
United Kingdom

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Linear and Nonlinear Gain of Sb-Based Quantum-Dot Semiconductor Optical Amplifiers

Author(s): B. Al-Nashy and Amin H. Al-Khursan

Affiliation: Nassiriya Nanotechnology Research Laboratory (NNRL), Science College, Thi-Qar University, Nassiriya, Iraq.

Keywords: Quantum dot (QD), semiconductor optical amplifier (SOA), Sb-mole fraction, spectral hole burning (SHB), slowlight, dot, semiconductor, (IR), QD-SOA, (SHB), (TCDD), TE polarization, WL, quasi-Fermi energy, Sb-fraction, GaSb, wavelength, (FWHM), EIT

Abstract:

Linear and nonlinear gain spectra are studied in Sb-based quantum-dot (QD) semiconductor optical amplifiers (SOAs). Quantum size, homogenous linewidth and effect of Sb-composition in the QD, wetting and barrier layers are studied also. InSb and InAs0.3Sb0.7 QD-SOAs give enough gain saturation. The study covers (1000-7000nm) wavelength range. This work covers some new patents in this field.

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Article Details

VOLUME: 3
ISSUE: 3
Page: [232 - 240]
Pages: 9
DOI: 10.2174/1874476111003030232