Recent Patents on C-V Profiling of Heterostructures Based on Narrow-Gap Semiconductor ZnCdHgTe

Author(s): Andre M. Andrukhiv, Halyna M. Khlyap, Viktor I. Laptev, Petro G. Sydorchuk, Jacek Polit.

Journal Name:Recent Patents on Electrical Engineering

Volume 2 , Issue 3 , 2009


C-V-profiling has been performed for p-p heterostructures based on new narrow-gap compaund semiconductor ZnCdHgTe. The effective dielectric constant of the whole heterostructure and corrected carriers profile have been calculated as function of the transition region width for various compositions localized near the heterointerface. A good agreement between experimental and numerical simulation of C-V characteristics was demonstrated. Recent patents on thin film technologies are also discussed in this paper.

Keywords: ZnCdHgTe film, capacitance-voltage characteristic, charge carriers profile

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Article Details

Year: 2009
Page: [239 - 244]
Pages: 6
DOI: 10.2174/1874476110902030239
Price: $100