Status of Silicon Carbide Micromachining, Circuits and Sensing Devices
Wei Tang and Haixia Zhang
Affiliation: National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Institute of Microelectronics, Peking University Cheng Fu Road, Haidian District Beijing, 100871, China.
Keywords: Harsh environment, micromachining, SiC, SiC circuit, SiC MEMS, SiC Wafer, SiC Thin Film, Doping, Oxidation, Ohmic Contacts
Silicon carbide (SiC) is an attractive material for high-temperature, high-power, high-frequency applications, due to its outstanding electrical, mechanical properties, and chemical inertness. SiC semiconductor technology has been developed widely since the commercialization of 6H-SiC and 4H-SiC bulk SiC wafers in 1990s. This paper reviews the recent patents on SiC semiconductor technology, introduces the achievements both in academy and industry for micromachining technologies, circuits devices. All these developments are driving high-performance SiC devices into harsh environment applications.
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