Recent Patents on Materials Science

Khurshid Zaman  
Bentham Science Publishers
USA

Back

Recent Progress in Semiconductor Thin Film Technology

Author(s): Halyna M. Khlyap, Andre M. Andrukhiv and Petro G. Sydorchuk

Affiliation: State Pedagogical University, 24 Franko str. UA-82100 Drohobych, Ukraine.

Keywords: ZnCdHgTe semiconductor solid solution, atmospheric oxygen, stability of electrical characteristics, Semiconductor, Thin Film Technology, Laser irradiation, pulse laser deposition, epitaxial technologies, novel micro(nano)electronic devices, IR-detectors, optoelectronic active elements, metallic oxides, metallic cations, oxide, semiconductor physics, modified liquid phase epitaxy (MLPE), molecular beam epitaxy, tomic layer deposition (ALD), mother glass, roll-to-roll technique, low-temperature polysilicon process, dehydro-genation annealing, amorphous, crystallization, hydroge-nation, vacuum technologies, (transmission spectra), anisotype, current-voltage characteristics, atmospheric conditions, carrier transport mechanism, film surface - film depth, epitaxial layer, conductance current mechanism, elemental heterostructure, heterojunctions, intercrystalline boundaries, insulators, Anderson theory, Augerionization, three-dimensional solar cells, nanosensors, thin-film based transistors, inverted pyramidal cavity, emitter metallization regions, fluorescent bulb, integrated circuits, ionized oxygen, tetraethoxy-silane, sol-gel method, substrate/native oxide, film-based sensors

Abstract:

Laser irradiation, pulse laser deposition and various epitaxial technologies are used for manufacturing novel micro(nano)electronic devices. IR-detectors are of special interest, in particular, their stable functionality under environmental effects seem to be important. None of the optoelectronic active elements operates out of its environment, i.e. we have to consider the unavoidable effect of atmospheric oxygen on all investigated characteristics. Inorganic solids with various band gaps are usually used in industry as optical materials. Many metallic oxides have wide band gaps, because of the significant contribution of the ionic character of the chemical bonds between metallic cations and oxide ions. However, their application for the design of different active elements for optoelectronics requires more detailed information concerning the formation and properties of the corresponding compound. This review discusses this problem and the patents concerning the semiconductor production and assembly using thin film technology.

Order Reprints Order Eprints Rights & PermissionsPrintExport

Article Details

VOLUME: 4
ISSUE: 1
Page: [50 - 55]
Pages: 6
DOI: 10.2174/1874464811104010050