Current Development and Patents on High-Brightness White LED for Illumination
Wen-Yuan Pang, Ikai Lo, Chia-Ho Hsieh, Yu-Chi Hsu, Ming-Chi Chou and Cheng-Hung Shih
Affiliation: Department of Physics, Institute of Material Science and Engineering, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan 80424, Republic of China.
Keywords: GaN, light-emitting diode, LiAlO2
In this paper, we reviewed the current development and patents for the application of high-brightness and highefficiency white light-emitting diode (LED). The high-efficiency GaN nanostructures, such as disk, pyramid, and rod were grown on LiAlO2 substrate by plasma-assisted molecular-beam epitaxy, and a model was developed to demonstrate the growth of the GaN nanostructures. Based on the results, the GaN disk p-n junction was designed for the application of high brightness and high efficiency white LED.
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