Abstract
In this paper, we reviewed the current development and patents for the application of high-brightness and highefficiency white light-emitting diode (LED). The high-efficiency GaN nanostructures, such as disk, pyramid, and rod were grown on LiAlO2 substrate by plasma-assisted molecular-beam epitaxy, and a model was developed to demonstrate the growth of the GaN nanostructures. Based on the results, the GaN disk p-n junction was designed for the application of high brightness and high efficiency white LED.
Keywords: GaN, light-emitting diode, LiAlO2
Recent Patents on Nanotechnology
Title: Current Development and Patents on High-Brightness White LED for Illumination
Volume: 4 Issue: 1
Author(s): Wen-Yuan Pang, Ikai Lo, Chia-Ho Hsieh, Yu-Chi Hsu, Ming-Chi Chou and Cheng-Hung Shih
Affiliation:
Keywords: GaN, light-emitting diode, LiAlO2
Abstract: In this paper, we reviewed the current development and patents for the application of high-brightness and highefficiency white light-emitting diode (LED). The high-efficiency GaN nanostructures, such as disk, pyramid, and rod were grown on LiAlO2 substrate by plasma-assisted molecular-beam epitaxy, and a model was developed to demonstrate the growth of the GaN nanostructures. Based on the results, the GaN disk p-n junction was designed for the application of high brightness and high efficiency white LED.
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Cite this article as:
Pang Wen-Yuan, Lo Ikai, Hsieh Chia-Ho, Hsu Yu-Chi, Chou Ming-Chi and Shih Cheng-Hung, Current Development and Patents on High-Brightness White LED for Illumination, Recent Patents on Nanotechnology 2010; 4 (1) . https://dx.doi.org/10.2174/187221010790712129
DOI https://dx.doi.org/10.2174/187221010790712129 |
Print ISSN 1872-2105 |
Publisher Name Bentham Science Publisher |
Online ISSN 2212-4020 |
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