Current Development and Patents on High-Brightness White LED for Illumination

Author(s): Wen-Yuan Pang, Ikai Lo, Chia-Ho Hsieh, Yu-Chi Hsu, Ming-Chi Chou, Cheng-Hung Shih.

Journal Name: Recent Patents on Nanotechnology

Volume 4 , Issue 1 , 2010

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In this paper, we reviewed the current development and patents for the application of high-brightness and highefficiency white light-emitting diode (LED). The high-efficiency GaN nanostructures, such as disk, pyramid, and rod were grown on LiAlO2 substrate by plasma-assisted molecular-beam epitaxy, and a model was developed to demonstrate the growth of the GaN nanostructures. Based on the results, the GaN disk p-n junction was designed for the application of high brightness and high efficiency white LED.

Keywords: GaN, light-emitting diode, LiAlO2

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Article Details

Year: 2010
Page: [32 - 40]
Pages: 9
DOI: 10.2174/187221010790712129

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