Recent Patents on Materials Science

Khurshid Zaman  
Bentham Science Publishers
USA

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Latest Progress in Design of Thin Film-Based Sensors

Author(s): Violetta I. Bilozertseva, Halyna M. Khlyap, Dmytro M. Gaman, Nina L. Dyakonenko, Petro S. Shkumbatyuk and Andre A. Mamaluy

Affiliation: University of Technology, Distelstr. 12, D-67657 Kaiserslautern, Germany.

Keywords: Chalcogenide Bi-containing semiconductors, thin film, nanocrystal, AFM, current mechanisms, nitrogen monoxide, hydrogen

Abstract:

Chalcogenide semiconductor thin films are reported for the first time as prospective aggressive gases sensors. Results of structural investigations and electric field-induced properties of thin (40-100nm) Bi-containing semiconductor thin films grown on glass substrates by UHV technique are reported. Microstructure and phase composition of the films are examined by transmission electron microscopy (TEM) and electron diffraction methods. Room-temperature currentvoltage dependencies are also studied and possible mechanisms of charge carriers transport are discussed. Recent patents on thin film-based gas sensors production are also discussed in this paper.

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Article Details

VOLUME: 3
ISSUE: 1
Page: [68 - 75]
Pages: 8
DOI: 10.2174/1874464811003010068