Temperature Behaviors of In(Ga)As/GaAs Quantum Dots and Patents on the T-Sensitivity of the Lasers
Affiliation: Lab. of semiconductor Materials Science, Institute of Semiconductors, Chinese Academy, P. O. Box 912, Beijing 100083, P.R. China.
Keywords: Quantum dots, photoluminescence, temperature behavior, laser's T-sensitivity
In contradiction to the theoretical prediction, the characteristics of the quantum dots are thermally unstable in the relatively high temperature regime. This article briefly summaries the temperature behavior of the self-assembled quantum dots in the In(Ga)As/GaAs system, as experimentally observed in both the time-integrated and time-resolved photoluminescence measurements on thermal anomalies, thermal quenching, relaxation- and radiative-lifetime of the quantum dots. In addition, the efforts made in the relevant patterns to reduce the T sensitivity of the semiconductor lasers based on the quantum dots are described. The article gives a brief review on the recent relevant patents.
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