Recent Patents on Materials Science

Khurshid Zaman  
Bentham Science Publishers
USA

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Temperature Behaviors of In(Ga)As/GaAs Quantum Dots and Patents on the T-Sensitivity of the Lasers

Author(s): Ju Wu

Affiliation: Lab. of semiconductor Materials Science, Institute of Semiconductors, Chinese Academy, P. O. Box 912, Beijing 100083, P.R. China.

Keywords: Quantum dots, photoluminescence, temperature behavior, laser's T-sensitivity

Abstract:

In contradiction to the theoretical prediction, the characteristics of the quantum dots are thermally unstable in the relatively high temperature regime. This article briefly summaries the temperature behavior of the self-assembled quantum dots in the In(Ga)As/GaAs system, as experimentally observed in both the time-integrated and time-resolved photoluminescence measurements on thermal anomalies, thermal quenching, relaxation- and radiative-lifetime of the quantum dots. In addition, the efforts made in the relevant patterns to reduce the T sensitivity of the semiconductor lasers based on the quantum dots are described. The article gives a brief review on the recent relevant patents.

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Article Details

VOLUME: 2
ISSUE: 3
Page: [244 - 251]
Pages: 8
DOI: 10.2174/1874464810902030244