Recent Patents on Nanotechnology

Eduardo Ruiz- Hitzky  
Department of New Architectures in Materials Chemistry
Materials Science Institute of Madrid


Effect of Annealing on Orientation of Bi3.2Sm0.8Ti3O12 Ferroelectric Film Prepared by Sol-Gel Process

Author(s): Haiyan Y. He, Jianfeng F. Huang, Liyun Y. Cao, Jianpeng P. Wu.


Fatigue-free Bi3.2Sm0.8Ti3O12 ferroelectric thin films were prepared on p-Si(100) substrate using a sol-gel deposition process. The formation and orientation of thin films were studied upon annealing conditions with XRD and SEM. Experiment results indicate that after preannealing at 400°C for 10 min, annealing at 700°C resulted in formation of strong a-axis oriented films. The orientation degree, I(200)/I(117), remarkably increases from 1.033 to 1.76 and 6.49 with increasing annealing time from 3 to 10 and 15 min respectively. However, only (117)-oriented films were produced by annealing films at 900°C for 3 min without the preannealing.

Keywords: Bi3.2Sm0.8Ti3O12 film, Sol-gel process, grain size, microstructure, preannealing, orientation

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Article Details

Year: 2009
Page: [73 - 76]
Pages: 4
DOI: 10.2174/187221009787003267