P-wave-enhanced Spin Field Effect Transistor and Recent Patents

Author(s): Ming-Hong Gau, Ikai Lo, Wan-Tsang Wang, Jih-Chen Chiang, Mitch Ming-Chi Chou.

Journal Name: Recent Patents on Nanotechnology

Volume 1 , Issue 3 , 2007

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P-wave-enhanced spin field-effect transistor made of AlGaN/GaN heterostructure was designed for the spintronic devices operated at high power and high temperature. The operation theory is based on the spin-polarized field-effect transistor designed by Datta and Das [Appl. Phys. Lett. 56, 665 (1990)]. The mechanism of the p-wave enhancement in AlGaN/GaN heterostructure was investigated. The recent development and related patents in the spin-polarized field-effect transistor were reviewed. In particular, we will focus on the recent patents which could enhance p-wave probability and control of spin precession of 2DEG in the AlGaN/GaN transistor structure.

Keywords: Spin-FET, spin-orbital interaction, Rashba effect, Dresselhaus effect, spintronics

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Article Details

Year: 2007
Page: [169 - 175]
Pages: 7
DOI: 10.2174/187221007782360457
Price: $65

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