Abstract
Nanoclusters (NC) as charge storage nodes have been applied in nonvolatile, high-speed, high-density and low-power memory devices. Compared with conventional floating gate memory, where a layer of poly-Si is used for charge storage, a memory device composed of nanoclusters isolated by dielectrics benefits from a relatively low operating voltage, high endurance, fast write-erase speeds and better immunity to soft errors due to the quantum confinement and Coulomb blockade effects. Recent patents in this field have proposed several innovated structures and fabrication methods for nanocluster based floating gate flash memory and single-electron memory devices.
Keywords: Nanocluster, Nanocrystal, non-volatile memory, floating-gate memory, single electron deive
Recent Patents on Nanotechnology
Title: Recent Patents in Semiconductor Nanocluster Floating Gate Flash Memory
Volume: 1 Issue: 2
Author(s): Jiyan Y. Dai and Pui-Fai Lee
Affiliation:
Keywords: Nanocluster, Nanocrystal, non-volatile memory, floating-gate memory, single electron deive
Abstract: Nanoclusters (NC) as charge storage nodes have been applied in nonvolatile, high-speed, high-density and low-power memory devices. Compared with conventional floating gate memory, where a layer of poly-Si is used for charge storage, a memory device composed of nanoclusters isolated by dielectrics benefits from a relatively low operating voltage, high endurance, fast write-erase speeds and better immunity to soft errors due to the quantum confinement and Coulomb blockade effects. Recent patents in this field have proposed several innovated structures and fabrication methods for nanocluster based floating gate flash memory and single-electron memory devices.
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Cite this article as:
Jiyan Y. Dai and Pui-Fai Lee , Recent Patents in Semiconductor Nanocluster Floating Gate Flash Memory, Recent Patents on Nanotechnology 2007; 1 (2) . https://dx.doi.org/10.2174/187221007780859636
DOI https://dx.doi.org/10.2174/187221007780859636 |
Print ISSN 1872-2105 |
Publisher Name Bentham Science Publisher |
Online ISSN 2212-4020 |
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