Growth Mechanism and Field Emission Characteristics of GaO/GaN Nanotips Using Iodine-assisted Enhanced Focused Ion Beam Etching

Author(s): Zhan-Shuo Hu , Fei-Yi Hung , Shoou-Jinn Chang , Bohr-Ran Huang , Bo-Cheng Lin , Kuan-Jen Chen , Tse-Pu Chen , Wen-I Hsu .

Journal Name: Current Nanoscience

Volume 7 , Issue 4 , 2011

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GaN nanorods are fabricated with an AgO mask by a process of iodine-assisted focused ion beam etching (IFIBE). The transformation from GaN nanorod to GaN nanotip structure, the thermal treatment uses a high temperature of 800° C in air to increase the partial oxygen pressure resulting in the formation of a double mask, GaO and AgO. In addition, the Ag clusters react with the iodine gas to affect the etching rate and retain a GaO zone on the GaN nanotip arrays. Oxide-capped GaN nanotips can be applied as field emitter. The turn-on electric field was 2.2V/um when the current density was 0.1mA/cm2.

Keywords: Ag, double masks, field emission, FIB, GaN, iodine, iodine GaN nanotip, GaO, AgO, Etching Mechanism, Ag cluster

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Article Details

Year: 2011
Page: [594 - 597]
Pages: 4
DOI: 10.2174/157341311796196718
Price: $58

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