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Growth Mechanism and Field Emission Characteristics of GaO/GaN Nanotips Using Iodine-assisted Enhanced Focused Ion Beam Etching

Author(s): Zhan-Shuo Hu, Fei-Yi Hung, Shoou-Jinn Chang, Bohr-Ran Huang, Bo-Cheng Lin, Kuan-Jen Chen, Tse-Pu Chen, Wen-I Hsu.

Abstract:

GaN nanorods are fabricated with an AgO mask by a process of iodine-assisted focused ion beam etching (IFIBE). The transformation from GaN nanorod to GaN nanotip structure, the thermal treatment uses a high temperature of 800° C in air to increase the partial oxygen pressure resulting in the formation of a double mask, GaO and AgO. In addition, the Ag clusters react with the iodine gas to affect the etching rate and retain a GaO zone on the GaN nanotip arrays. Oxide-capped GaN nanotips can be applied as field emitter. The turn-on electric field was 2.2V/um when the current density was 0.1mA/cm2.

Keywords: Ag, double masks, field emission, FIB, GaN, iodine, iodine GaN nanotip, GaO, AgO, Etching Mechanism, Ag cluster

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Article Details

VOLUME: 7
ISSUE: 4
Year: 2011
Page: [594 - 597]
Pages: 4
DOI: 10.2174/157341311796196718
Price: $58