Abstract
Probe-shaped GaN nanorods were successfully synthesized on Si(111) substrates through ammoniating Ga2O3/Mo films at 950 °C. X-ray diffraction (XRD), scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM) were used to characterize the as-synthesized nanorods. The results show that the synthesized sample is well crystallized GaN with hexagonal wurzite structure. And the GaN nanorods own probe-shaped morphology and smooth surface. X-ray photoelectron spectroscopy (XPS) confirms the formation of bonding between Ga and N and the surface stoichiometry of Ga:N of 1:1. The representative photoluminescence spectrum at room temperature exhibits a strong UV light emission band centered at 371.5 nm. Finally, the growth process of probe-shaped GaN nanorods was briefly discussed.
Keywords: GaN nanorods, ammoniating, luminescence
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