Advances in III-V Semiconductor Nanowires and Nanodevices

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Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires ...
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III-V Semiconductor Nanowire Transistors

Pp. 129-144 (16)

Franz-Josef Tegude and Werner Prost

Abstract

Semiconductor nanowires may be used as the channel of a field-effect transistor device. In contrast to field-effect transistors made of epitaxial layers, the nanowire approach provides large material diversity and enables a fully surrounding gate contact. In this way, no carriers can escape from the channel and a higher transconductance is routinely observed. In contrast to carbon nanotubes the charge polarity can be selected and a metallic phase that may inhibit the channel depletion is avoided. In this chapter device concepts will be presented based on semiconductor band structure and heterostructures. Recent advances in device technology and selfassembly will be discussed. The corresponding DC performance of the different nanowire approaches is reviewed. Special emphasis is given on the measurement and the performance of nanowire field-effect transistors at high frequencies.

Keywords:

Nanowire, vapor-liquid-solid, growth, field-effect transistor, InAs, high frequency electronics, coplanar waveguide.

Affiliation:

Center for Semiconductor Technology and Optoelectronics, University Duisburg-Essen, Lotharstr. 55, D-47057 Duisburg, Germany