Advances in III-V Semiconductor Nanowires and Nanodevices

Indexed in: Book Citation Index, Science Edition, Chemical Abstracts, Scopus, EBSCO, Ulrich's Periodicals Directory

Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires ...
[view complete introduction]

US $
30

*(Excluding Mailing and Handling)



III-V Ternary Nanowires

Pp. 105-128 (24)

Faustino Martelli

Abstract

In this chapter I will give an overview of the existing knowledge on the growth and the main properties of III-V ternary nanowires. I will describe bare ternary as well as heterostructure nanowires, both axial and radial. A particular emphasis is given to the competing behaviors occurring during the growth of this class of nanowires, that is different ad-atom incorporation due to different properties of impinging species of the same group: diffusion lengths, solution of the different element in the catalyst nanoparticle and the thermal stability of chemical bonds. These competing processes have effects on alloy composition, composition uniformity and nanowire shape.

Keywords:

Nanowires, ternary alloys, III-V compounds, crystal growth, arsenides, phosphides, antimonides, nitrides.

Affiliation:

Istituto per la Microelettronica e i Microsistemi del Consiglio Nazionale delle RicercheVia del Fosso del Cavaliere 100, 00133 Roma, Italy