Advances in III-V Semiconductor Nanowires and Nanodevices

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Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires ...
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Growth, Properties, and Device Applications of III-Nitride Nanowire Heterostructures

Pp. 22-42 (21)

Zetian Mi

Abstract

This book chapter provides an overview of the recent developments of III-nitride nanowire heterostructures consisting of GaN, AlN, InN, and their alloys. The growth techniques and mechanisms for IIInitride nanowires are first briefly reviewed, followed by detailed discussions on the structural, optical and electrical transport properties of various III-nitride nanowire heterostructures. Special attention is paid to the recent achievement of high quality InN, InGaN core-shell, as well as dot-in-a-wire nanoscale heterostructures. The emerging device applications of III-nitride nanowires, including nanoscale transistors, LEDs, lasers, and solar cells are presented, and the challenges and future prospects of III-nitride nanowires are also discussed.

Keywords:

Nanowire, GaN, InN, AlN, light emitting diode, transistor, solar cell.

Affiliation:

Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec, Canada H3A 2A7