General Synthetic Strategies for III-V Nanowires
Pp. 3-21 (19)
Jianye Li and Hongmin Zhu
III-V semiconductor nanowires are expected to play a significant role in future nanoscale electronic
and optoelectronic devices. In this chapter, we attempt to review the general synthetic strategies for III-V
compound nanowires. We first summarize various III-V nanowire growth techniques such as chemical vapor
deposition, laser ablation, metal-organic chemical vapor deposition, molecular beam epitaxy, chemical beam
epitaxy, hydride vapour phase epitaxy, wafer annealing, and low-temperature solution methods. Subsequently, we
discuss mechanisms involved to generate III-V nanowires from different synthetic schemes and conditions,
including vapor-liquid-solid, vapor-solid-solid, solution-liquid-solid, vapor-solid (self-catalytic, oxide-assisted,
and axial screw dislocation), ligand-aided solution-solid, and reactive Si-assisted growth.
III-V compounds, semiconductor, nanowires, synthetic strategy, growth technique, growth mechanism.
Department of Physical Chemistry, University of Science & Technology Beijing, China