2D Honeycomb Silicon: A Review on Theoretical Advances for Silicene Field-Effect Transistors

(E-pub Ahead of Print)

Author(s): Mu Wen Chuan, Kien Liong Wong, Afiq Hamzah, Sharizal Rusli, Nurul Ezaila Alias, Cheng Siong Lim, Michael Loong Peng Tan*.

Journal Name: Current Nanoscience

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Abstract:

Catalysed by the success of mechanical exfoliated free-standing graphene, two dimensional (2D) semiconductor materials are successively an active area of research. Silicene is a monolayer of silicon (Si) atoms with a low-buckled honeycomb lattice possessing a Dirac cone and massless fermions in the band structure. Another advantage of silicene is its compatibility with the Silicon wafer fabrication technology. To effectively apply this 2D material in the semiconductor industry, it is important to carry out theoretical studies before proceeding to the next step. In this paper, the overview of silicene and silicene nanoribbons (SiNRs) is described. After that, the theoretical studies to engineer the bandgap of silicene are reviewed. Recent theoretical advancement on the applications of silicene for various field-effect transistors (FET) structures are also discussed. Theoretical studies of silicene have shown promising results for the application as FETs and the efforts to study the performance of bandgap-engineered silicene FET should continue to improve the device performance.

Keywords: silicene, silicon, two-dimensional materials, bandgap engineering, transistor, theoretical studies

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Article Details

(E-pub Ahead of Print)
DOI: 10.2174/1573413715666190709120019
Price: $95

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