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ISSN (Online): 1875-6786

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Review Article

Recent Progress in Nano-electronic Devices Based on EBL and IBL

Author(s): Yusheng Pan and Ke Xu*

Volume 16, Issue 2, 2020

Page: [157 - 169] Pages: 13

DOI: 10.2174/1573413715666190701111638

Price: $65

Abstract

Electron beam lithography (EBL) and ion beam lithography (IBL) are extremely promising nanofabrication techniques for building nano-electronic devices due to their outstanding physical and electronic properties. In this review, an overview of EBL and IBL and a comparison of nanoelectronics fabricated based on four types of materials, namely graphene, ZnO, TiO2 and Ge, are presented. In each type of material, numerous practical examples are also provided in the illustration. Later, the strengths and weaknesses of EBL and IBL are presented in details. Finally, the similarities and differences between the two techniques are discussed and concluded.

Keywords: Nano-electronic devices, electron beam lithography, ion beam lithography, nanofabrication techniques, ZnO, TiO2.

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