Electron beam lithography (EBL) and ion beam lithography (IBL) are extremely promising
nanofabrication techniques for building nano-electronic devices due to their outstanding physical
and electronic properties. In this review, an overview of EBL and IBL and a comparison of nanoelectronics
fabricated based on four types of materials, namely graphene, ZnO, TiO2 and Ge, are presented.
In each type of material, numerous practical examples are also provided in the illustration.
Later, the strengths and weaknesses of EBL and IBL are presented in details. Finally, the similarities
and differences between the two techniques are discussed and concluded.
Keywords: Nano-electronic devices, electron beam lithography, ion beam lithography, nanofabrication techniques, ZnO, TiO2.
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