A Low Power - High Speed CNTFETs Based Full Adder Cell With Overflow Detection

Author(s): Jitendra Kumar Saini, Avireni Srinivasulu*, Renu Kumawat.

Journal Name: Micro and Nanosystems

Volume 11 , Issue 1 , 2019

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Abstract:

The transformation from the development of enabling technology to mass production of consumer-centric semiconductor products has empowered the designers to consider characteristics like robustness, compactness, efficiency, and scalability of the product as implicit pre-cursors. The Carbon Nanotube Field Effect Transistor (CNFET) is the present day technology. In this manuscript, we have used CNFET as the enabling technology to design a 1-bit Full Adder (1b-FA16) with overflow detection. The proposed 1b-FA16 is designed using 16 transistors. Finally, the proposed 1b-FA16 is further used to design a Ripple Carry Adder (RCA), Carry Look Ahead Adder (CLA) circuit and RCA with overflow bit detection.

Methods and Results: The proposed 1b-FA16 circuit was designed with CNFET technology simulated at 32 nm with a voltage supply of +0.9 V using the Cadence Virtuoso CAD tool. The model used is Stanford PTM. Comparison of the existing full adder designs with the proposed 1b-FA16 design was done to validate the improvements in terms of power, delay and Power Delay Product (PDP). Table 2, shows the results of comparison for the proposed 1b-FA16 with the existing full adder designs implemented using CNFET for parameters like power, delay and power delay product.

Conclusion: It can be concluded that the proposed 1b-FA16 yielded better results as compared to the existing full adder designs implemented using CNFET. The improvement in power, delay and power delay product was approximately 11%, 9% and 24% respectively. Hence, the proposed circuit implemented using CNFET gives a substantial rate of improvements over the existing circuits.

Keywords: Carbon nanotube field effect transistors, CNFET, full adders, overflow detection, ripple carry adders, carry lookahead adder.

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Article Details

VOLUME: 11
ISSUE: 1
Year: 2019
Page: [80 - 87]
Pages: 8
DOI: 10.2174/1876402911666190211154634

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