Background: The accurate energy yield prediction of a PV system under various environmental conditions is important for designing a high performance PV system.
Objective: The robust and cost-effective digital simulation studies on PV systems have the advantage in comparison to studies based on measurements because they provide the opportunity for sensitivity analysis on various design parameters of the PV system.
Method: Herein, we present the development and implementation of a generalized photovoltaic computational model using Matlab/Simulink software package. The model is based on the equivalent diode circuit approach. It is designed to simulate two ubiquitous and high performing 2nd generation photovoltaic (PV) modules constructed with Cadmium Telluride (CdTe) and Copper Indium Gallium di-Selenide (CIGS) photoactive thin films, respectively. The values of key input parameters to the simulator, i.e., parallel resistor (Rp) and series resistor (Rs) have been computed by an efficient Newton-Raphson iteration method.
Results: The output current-voltage (I-V) and power-voltage (P-V) characteristic curves of the aforementioned PV modules have been simulated by taking two input variables (ambient irradiance and temperature) into consideration. The electrical performance of both PV modules under various environmental conditions have been mathematically investigated by the solution of classical non-linear equations.
Conclusion: The developed PV model has been validated with the experimental results obtained from standard PV module datasheets provided by manufacturers. The relative error between simulated and experimental values of various photovoltaic parameters for CdTe and CIGS PV modules at Standard Test Conditions (STC) has been observed to be below 3%.