Multiple Quantum Barrier Nano-avalanche Photodiodes - Part III: Time and Frequency Responses

Author(s): Somrita Ghosh, Aritra Acharyya*.

Journal Name: Nanoscience & Nanotechnology-Asia

Volume 9 , Issue 2 , 2019

Become EABM
Become Reviewer

Graphical Abstract:


Background: The time and frequency responses of Multiple Quantum Barrier (MQB) nano-scale Avalanche Photodiodes (APDs) based on Si~3C-SiC material system have been investigated in this final part.

Methods: A very narrow rectangular pulse of pulse-width of 0.4 ps has been used as the input optical pulse having 850 nm wavelength incidents on the p+-side of the MQB APD structures and corresponding current responses have been calculated by using a simulation method developed by the authors.

Results: Finally the frequency responses of the devices are obtained via the Fourier transform of the corresponding pulse current responses in time domain.

Conclusion: Simulation results show that MQB nano-APDs possess significantly faster time response and wider frequency response as compared to the flat Si nano-APDs under similar operating conditions.

Keywords: Avalanche photodiode, dark current, multiple quantum barrier, photocurrent, quantum well, self-consistent solution, spectral response.

Ghosh, S.; Acharyya, A. Multiple quantum barrier nano-avalanche photodiodes - Part I: Spectral Response. Nanosci. Nanotechnol. Asia, 2019. [EPub ahead of Print].
Ghosh, S.; Acharyya, A. Multiple quantum barrier nano-avalanche photodiodes - Part II: Excess noise characteristics. Nanosci. Nanotechnol. Asia, 2019. [EPub ahead of Print].
Acharyya, A.; Ghosh, S. Dark current reduction in nano-avalanche photodiodes by incorporating multiple quantum barriers. Int. J. Electron., 2017, 104(12), 1957-1973.
Ghosh, M.; Ghosh, S.; Acharyya, A. Self-consistent quantum drift-diffusion model for multiple quantum well IMPATT diodes. J. Comput. Electron., 2017, 15(4), 1370-1387.
Grant, W.N. Electron and hole ionization rates in epitaxial Silicon. Solid-State Electron., 1973, 16, 1189-1203.
Bellotti, E.; Nilsson, H.E.; Brennan, K.F.; Ruden, P.P. Ensemble Monte Carlo calculation of hole transport in bulk 3C-SiC. J. Appl. Phys., 1999, 85(6), 3211-3217.
Canali, C.; Ottaviani, G.; Quaranta, A.A. Drift velocity of electrons and holes and associated anisotropic effects in silicon. J. Phys. Chem. Solids, 1971, 32, 1707-1720.
Mickevicius, R.; Zhao, J.H. Monte Carlo study of electron transport in SiC. J. Appl. Phys., 1998, 83(6), 3161-3167.

Rights & PermissionsPrintExport Cite as

Article Details

Year: 2019
Page: [192 - 197]
Pages: 6
DOI: 10.2174/2210681208666180813122642
Price: $58

Article Metrics

PDF: 14