An Analytical Drain Current Model for Dual-material Gate Graded - channel and Dual-oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET

Author(s): Hind Jaafar*, Abdellah Aouaj, Ahmed Bouziane, Benjamin Iñiguez.

Journal Name: Nanoscience & Nanotechnology-Asia

Volume 9 , Issue 2 , 2019

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Abstract:

Background: A novel Dual Material Gate Graded Channel and Dual Oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET is presented in this paper.

Methods: Analytical model of drain current is developed using a quasi-two-dimensional cylindrical form of the Poisson equation and is expressed as a function of the surface potential, which is calculated using the expressions of the current density.

Results: Comparison of the analytical results with 3D numerical simulations using Silvaco Atlas - TCAD software presents a good agreement from subthreshold to strong inversion regime and for different bias voltages.

Conclusion: Two oxide thicknesses with different permittivity can effectively improve the subthreshold current of DMG-GC-DOT MOSFET.

Keywords: Dual metal gate, Dual Oxide Thickness (DOT), graded channel, subthreshold current, MOSFET, Metal-Oxide- Semiconductor (MOS).

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Article Details

VOLUME: 9
ISSUE: 2
Year: 2019
Page: [291 - 297]
Pages: 7
DOI: 10.2174/2210681208666180813122145
Price: $58

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