Title:Advances in Active Inductor Based CMOS Band-pass Filter
VOLUME: 10 ISSUE: 1
Author(s):Mohammad Arif Sobhan Bhuiyan, Mamun Bin Ibne Reaz, Mastuta Binti Omar, Mohammad Torikul Islam Badal* and Nahid A. Jahan
Affiliation:Department of Electrical, Electronic and Systems Engineering, Universiti Kebangsaan Malaysia, Bangi, 43600, Selangor, Department of Electrical, Electronic and Systems Engineering, Universiti Kebangsaan Malaysia, Bangi, 43600, Selangor, Department of Electrical, Electronic and Systems Engineering, Universiti Kebangsaan Malaysia, Bangi, 43600, Selangor, Department of Electrical, Electronic and Systems Engineering, Universiti Kebangsaan Malaysia, Bangi, 43600, Selangor, Department of Electronics and Communications Engineering, East West University, Dhaka-1212
Keywords:Active inductor, band-pass filter, CMOS, Q-factor, transceiver, RF devices.
Abstract:Background: All modern transceiver circuits utilize high-performance band pass filters for
proper frequency selection led the researchers to inaugurate the journey of CMOS active inductor. The
prime performance requirements of such circuits are very low power dissipation, relatively higher Qfactor
with fixed center frequency tuning but a tradeoff among these parameters is inevitable.
Method: A number of active inductor-based band pass filters have been designed over the years to obtain
better performance trade-offs and a discussion on these designs is presented from their advantages,
disadvantages and application point of view. The active inductors are capable of working effectively in
band pass filters at very high frequencies up to 11.47 GHz and can be designed to achieve smallest chip
area as low as 0.005 mm2. Besides some essential critical parameters such as high-quality factor, narrow
bandwidth, central frequency tuning, low voltage operation, very small power consumption etc. are also
achievable. Moreover, compared to Gm-C and Q-enhanced LC tank band pass filters, filters with active
inductor show better performance in terms of low power consumption, small silicon area, high Q factor
and tunability.
Conclusion: This review will help the engineers in designing compact and high-performance CMOS
band-pass filter circuits for various RF devices.
