Background: Hydrogen sensors are micro/nano-structure that are used to locate hydrogen
leaks. They are considered to have fast response/recovery time and long lifetime as compared to
conventional gas sensors. In this paper, fabrication of sensitive capacitive-type hydrogen gas sensor
based on Ni thin film has been investigated. The C-V curves of the sensor in different hydrogen concentrations
have been reported.
Method: Dry oxidation was done in thermal chemical vapor deposition furnace (TCVD). For oxidation
time of 5 min, the oxide thickness was 15 nm and for oxidation time 10 min, it was 20 nm. The
Ni thin film as a catalytic metal was deposited on the oxide film using electron gun deposition. Two
MOS sensors were compared with different oxide film thickness and different hydrogen concentrations.
Results: The highest response of the two MOS sensors with 15 nm and 20 nm oxide film thickness in
4% hydrogen concentration was 87.5% and 65.4% respectively. The fast response times for MOS
sensors with 15 nm and 20 nm oxide film thickness in 4% hydrogen concentration was 8 s and 21 s,
Conclusion: By increasing the hydrogen concentration from 1% to 4%, the response time for MOS
sensor (20nm oxide thickness), was decreased from 28s to 21s. The recovery time was inversely
increased from 237s to 360s. The experimental results showed that the MOS sensor based on Ni thin
film had a quick response and a high sensitivity.