Background: In this part of review, a detailed discussion of plasma enhanced chemical
vapour deposition (PECVD) has been done specially for the growth of single wall carbon nanotubes
(SWCNTs). Many scientific groups are working on this technique and modifying it day by day. This
part of discussion generally reviews the emerging status and high modification of nanotechnology
in the field of growth techniques specially for the carbon nanotubes (CNTs) which includes the (1)
Reaction chamber (2) Role of plasma in CNT growth (3) Mechanism of CNT growth (4) Applications
Nanotechnology is the emerging field nowadays. This technology is changing the face and structure
of the world. New nanomaterials are being designed and fashioned by advanced techniques like
PECVD as per the application point of view. The new properties of the materials are being investigated
with the reduced dimension of the materials. Nanoparticles are showing completely different
properties as compared to the bulk materials. From these nanomaterials carbon nanotubes (CNTs) are
one of them. CNTs are attracting much attention of scientific community due to their excellent properties.
Methods: As per the literature survey, there are three main techniques for the growth of CNTs. The
main three techniques are as follows: (1) arc discharge technique, (2) Laser ablation technique, (3)
Chemical vapour deposition (CVD) technique. Plasma enhanced chemical vapour deposition
(PECVD) is the best alternative, excellent and most modified technique of chemical vapour deposition
(CVD) for the growth of CNTs. In this technique, the growth of CNTs takes place in the presence
of plasma at low temperature.
Results: Nanotechnology is making the things cheaper, smaller, durable and faster due to best designed
synthesis techniques. Due to the good properties of CNTs, the highly advanced CNT nano
technology can be used for a lot of market applications like energy storage, sensors, field emission
displays and transistors etc. New applications of CNTs are being explored.
Conclusion: High quality SWCNTs with extra ordinary properties can be successfully grown by
PECVD technique at low temperature for field emission display devices, sensor, and energy storage