On Optimization of Technological Process to Decrease Dimensions of Transistors with Several Sources

Author(s): Evgeny L. Pankratov , Elena A. Bulaeva .

Journal Name: Micro and Nanosystems

Volume 8 , Issue 1 , 2016

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Abstract:

Background: In this paper, we considered an approach to increase compactness of field-effect heterotransistor with several sources. In this approach, we considered a heterostructure, which consists of a substrate with required type of conductivity (p or n) and epitaxial layer. Required areas of the epitaxial layer have been doped by diffusion or ion implantation to manufacture reverse type of conductivity (n or p). After that we considered an optimized annealing of dopant and/or ra- diation defects to obtain most homogenous distribution of concentration of dopant in doped area and at the same time to decrease quantity of the dopant in the nearest areas. We also introduced an analytical approach for the prognosis of technological process.

Methods: Analytical modeling of physical processes is used during manufacturing of a heterotransistor with several sources.

Results: We formulate conditions to optimize technological process to decrease dimensions of field-effect heterotransistor with several sources.

Conclusion: In this paper, we introduced an approach to decrease dimensions of field-effect heterotransistor with several sources. The approach is based on manufacturing heterostructure, which consists of a substrate with required type of conductivity (p or n) and epitaxial layer. Required areas of the epitaxial layer have been doped by diffusion or ion implantation to manufacture reverse type of conductivity (n or p). After that, we considered an optimized annealing of dopant and/or radiation defects to obtain most homogenous distribution of concentration of dopant in doped area and at the same time to decrease quantity of the dopant in the nearest areas. We also introduced an analytical approach to prognosis mass and heat transport during technological process. Based on the analysis, we formulated conditions to obtain maximal compromise between increasing of homogeneity of distribution of concentration of dopant in doped area and at the same time decreasing quantity of the dopant in the nearest areas.

Keywords: Diffusion, dopant, field-effect transistor, heterotransistor, increasing of compactness of transistors, transistor with several channels.

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Article Details

VOLUME: 8
ISSUE: 1
Year: 2016
Page: [52 - 64]
Pages: 13
DOI: 10.2174/1876402908666160805103017

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