This paper presents a comparison of temperature dependence of I-V characteristics in Carbon
Nanotube Field Effect Transistors (CNTFETs) models proposed in the literature in order to identify
the one more easily implementable in simulation software for electronic circuit design. At first we
consider a compact, semi-empirical model, already proposed by us, performing I-V characteristic
simulations at different temperatures. Our results are compared with those obtained with two other
models: the numerical FETToy model and the Stanford-Source Virtual Carbon Nanotube Field-Effect
Transistor model (VS-CNFET), obtaining I-V characteristics comparable with those of two examined
models, but with CPU calculation times much lower.
Keywords: CNTFET, modelling, device simulation, I-V characteristics, temperature effects, verilog-A, computer aided design.
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