The Double-Gate SOI MOSFET Model
Pp. 495-545 (51)
Double-gate SOI MOSFET is proposed to overcome the scaling limit of bulk
MOSFETs. The device structure and corresponding device characteristics are quite
different from those of bulk MOSFETs. The potential distribution of the device is
investigated. The models for long channel and short channel devices are derived. The
results show that remarkable attention should be paid to the threshold voltage
adjustment of the double-gate SOI MOSFETs. n+-p+ polycrystalline Si gate double-gate
SOI MOSFETs are also proposed to adjust the threshold voltage without introducing
new gate materials, and their superb device characteristics are demonstrated.
Characteristic length, Double-gate, Fully-depleted, Gate length,
Poisson equation, Scaling theory, Short channel effects, Short channel immunity,
SOI, Subthreshold swing, Surface potential, Threshold voltage.
Fujitsu limited, Minatoku kaigan 1-11-1 Tokyo, Japan.