The Short Channel MOSFET Model
Pp. 433-463 (31)
Short channel MOSFET model was presented. The difficulty for the model
exists in that depletion width changes along the channel. A universal channel depletion
width parameter was proposed, which effectively expresses the channel depletion width
variation for various device parameters and bias conditions. Using this parameter, a
two-dimensional potential distribution was solved and a corresponding threshold
voltage model was derived, which reproduces the numerical data of sub-0.1-m gate
length devices. We further extend the model to non-uniform channel doping devices of
Channel doping, Charge sharing, Epi-MOSFET, Gate length, Junction
depth, Punch through, Scaling theory, Short channel effects, Short channel
immunity, Surface potential, Threshold voltage, Universal channel depletion width.
Fujitsu limited, Minatoku kaigan 1-11-1 Tokyo, Japan.