Bipolar Transistor and MOSFET Device Models

Continuous efforts to develop new semiconductor devices enable device manufacturers to make significant improvements in the information technology sector. Bipolar transistors and MOSFETS are two ...
[view complete introduction]

US $
30

*(Excluding Mailing and Handling)



The Short Channel MOSFET Model

Pp. 433-463 (31)

Kunihiro Suzuki

Abstract

Short channel MOSFET model was presented. The difficulty for the model exists in that depletion width changes along the channel. A universal channel depletion width parameter was proposed, which effectively expresses the channel depletion width variation for various device parameters and bias conditions. Using this parameter, a two-dimensional potential distribution was solved and a corresponding threshold voltage model was derived, which reproduces the numerical data of sub-0.1-m gate length devices. We further extend the model to non-uniform channel doping devices of epi-MOSFETs.

Keywords:

Channel doping, Charge sharing, Epi-MOSFET, Gate length, Junction depth, Punch through, Scaling theory, Short channel effects, Short channel immunity, Surface potential, Threshold voltage, Universal channel depletion width.

Affiliation:

Fujitsu limited, Minatoku kaigan 1-11-1 Tokyo, Japan.