The paper considers the use of low-energy composite ion beam radiation to change the superconducting
properties of ultrathin (5 nm) films of niobium nitride. It was found that the effect of ion
irradiation causes a reduction in the superconducting transition temperature and increasing the resistivity
of the film in the normal state. We studied the electrical properties of the irradiated films with doses
up to 12.6 d.p.a. (for Nitrogen) in the temperature range from 2 to 300 K. It is found that at a temperature
of 4.2 K films irradiated with doses of 12.6 d.p.a. and above showed electric conductivity mechanism
corresponding to typical insulators, and irradiated in a dose range 1.8-9 d.p.a. exhibited electrical
conductivity mechanism corresponding to metals. We considered the possibility to use the technique of
selective changes in the atomic composition under ion beam irradiation to create the resistive elements
for cryogenic temperatures.
Keywords: Composite ion beam irradiation, ion beam irradiation, niobium nitride thin films, radiation-induced changes in
atomic composition, radiation-induced modification of thin films, superconductive thin films.
Rights & PermissionsPrintExport