In this paper, we model mass and heat transport during manufacturing a field-effect transistor by
diffusion or ion implantation in a heterostructure. Based on this modeling we formulate recommendations
to optimize annealing of dopant and/or radiation defects to obtain distributions of concentrations of dopants
with higher sharpness. The increasing sharpness gives us the possibility to increase integration degree
of the field-effect heterotransistor. We also introduce an analytical approach to model redistribution of
concentration of dopant and radiation defects and relaxation of spatio-temporal distribution of temperature.
Keywords: Analytical approach to model technological process, field-effect transistors, increase integration rate of transistors,
optimization of technological process.
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