On Approach to Increase Integration Rate of Field-Effect Transistors by Using Inhomogeneity of Heterostructure and Optimization of Technological Process

Author(s): Evgeny L. Pankratov, Elena A. Bulaeva.

Journal Name: Micro and Nanosystems

Volume 6 , Issue 3 , 2014

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In this paper, we model mass and heat transport during manufacturing a field-effect transistor by diffusion or ion implantation in a heterostructure. Based on this modeling we formulate recommendations to optimize annealing of dopant and/or radiation defects to obtain distributions of concentrations of dopants with higher sharpness. The increasing sharpness gives us the possibility to increase integration degree of the field-effect heterotransistor. We also introduce an analytical approach to model redistribution of concentration of dopant and radiation defects and relaxation of spatio-temporal distribution of temperature.

Keywords: Analytical approach to model technological process, field-effect transistors, increase integration rate of transistors, optimization of technological process.

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Article Details

Year: 2014
Page: [168 - 177]
Pages: 10
DOI: 10.2174/187640290603150112123156
Price: $58

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