Current Nanoscience

Back

An Active CNTFET Model for RF Characterization Deduced from S Parameters Measurements

Author(s): Roberto Marani, Gennaro Gelao, Pasquale Soldano, Anna Gina Perri.

Graphical Abstract:


Abstract:

In this paper a procedure for RF characterization of Carbon NanoTube Field Effect Transistors is illustrated and applied to a back-gate CNTFET. S parameters measurements up to 12 GHz are performed and a new lumped element active two-port network is proposed and deduced from these measurements. To obtain the intrinsic RF behavior of the device, we perform a straightforward static de-embedding procedure, applicable to any other CNTFET structures. In this way it is possible to evaluate the intrinsic model to implement directly in simulation software for electronic circuits CAD.

Keywords: Carbon nanotube field effect transistors (CNTFETs), nanoelectronic devices, nanotechnology, modelling, RF characterization, S parameters measurements.

Order Reprints Order Eprints Rights & PermissionsPrintExport

Article Details

VOLUME: 11
ISSUE: 1
Year: 2015
Page: [36 - 40]
Pages: 5
DOI: 10.2174/1573413710666140909203046
Price: $58