An Active CNTFET Model for RF Characterization Deduced from S Parameters Measurements
Anna Gina Perri.
In this paper a procedure for RF characterization of Carbon NanoTube Field Effect Transistors is illustrated and
applied to a back-gate CNTFET. S parameters measurements up to 12 GHz are performed and a new lumped element active
two-port network is proposed and deduced from these measurements. To obtain the intrinsic RF behavior of the device,
we perform a straightforward static de-embedding procedure, applicable to any other CNTFET structures. In this
way it is possible to evaluate the intrinsic model to implement directly in simulation software for electronic circuits CAD.
Keywords: Carbon nanotube field effect transistors (CNTFETs), nanoelectronic devices, nanotechnology, modelling, RF characterization,
S parameters measurements.
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