Changing Electrical Properties in Diffusion-Junction and Implanted- Junction Rectifiers Under Influence of Porosity of Materials
Evgeny L. Pankratov,
Elena A. Bulaeva.
Changing of electrical properties during the manufacturing of the diffusion-junction and implanted-junction
rectifiers in a heterostructure with porous epitaxial layer was considered. It was shown that, in spite of the inhomogeneity
of the heterostructure, it is possible under specific conditions to increase the sharpness of diffusion-junction and
implanted-junction rectifiers and at the same time to increase homogeneity of distribution of dopant concentration in
doped area. It was shown that the porosity of epitaxial layer of heterostructure and the use of microwave annealing give
the possibility to increase the two above effects. The influence of the variations of dopant concentrations upon electrical
properties of p-n junction was also discussed by introducing an analytical approach to the model of mass transport.
Keywords: Diffusion-junction rectifier, electrical properties, implanted-junction rectifier, porous material.
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