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Current Nanoscience
ISSN (Print): 1573-4137
ISSN (Online): 1875-6786
Epub Full Text Article
DOI: 10.2174/1573413710666140526233427      Price:  $95









Symmetrical Dipole Contribution from Planar Defects on M-Plane ZnO Epitaxial Films

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Author(s): Chung-Wei Liu, Shoou-Jinn Chang, Yen-Teng Ho, Sanjaya Brahma, Li Chang and Kuang-Yao Lo
Abstract:
The planar defects such as basal stacking faults (BSFs) are probed on m-plane ZnO grown on LaAlO3(112) substrate by reflective second harmonic generation (RSHG). The BSFs result nonvanishing single-direction dipoles that behave similar to a mirror-like symmetrical dipole. The RSHG pattern from m-plane ZnO comprised of not only the bulk dipole contribution of ZnO but also an additional mirror-like symmetrical dipole contribution from BSF defects. Transmission electron microscopy image displays the presence of BSFs that lie in the c-plane of ZnO and agrees well with RSHG results. Planar BSFs are formed due to the anisotropic stress relaxation between m-plane ZnO film and LaAlO3(112) substrate, resulting in higher-quality m-plane ZnO films.
Keywords:
Basal stacking fault, non-polar plane, ZnO, second harmonic generation
Affiliation:
Institute of Microelectronics & Department of Electrical Engineering and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan.