This study attempted to manufacture Cu-In and Cu-Ga coating materials via the cold spray deposition (as a new process for
sputtering target material) and to investigate the material’s applicability as a sputtering target for solar cell. To examine the microstructural
and property changes made to those coating layers, purity, density, hardness, and porosity were measured. The results showed that
coating layers of Cu-In and Cu-Ga could be well manufactured via cold spraying under optimal process conditions. With the Cu-In coating
layer, the pure Cu and intermetallic compounds of Cu7In3 and Cu4In were found to exist inside the layer. In the case of Cu-Ga layer,
pure Cu, and Cu3Ga were detected. The value of porosity significantly decreased after annealing heat treatment. A Sputtering test was actually
conducted using the cold sprayed Cu based materials and it was confirmed that those coating materials could be applied as a sputtering
target material for solar cell.
Keywords: Annealing, cold spray deposition, Cu-In, Cu-Ga, solar cell, sputtering target.
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