Optical Properties and Thermal Stability of Ultrathin TaNx-Ag-Si Films for Low Emissivity Applications
Sivasankar Reddy Akepati,
Ho Tak Yu,
TaNx(1, 3 & 5 nm) films deposited on the Ag(10 nm)/Si(3 nm)/glass show dense microstructure, and this structure was stable
even after annealing at 300 °C in Ar (80%) + O2 (20%) ambient for 5 min. The RMS (Root Mean Square) roughness of the films decreased
with increasing the TaNx film thickness. The partial oxidation of TaNx was observed in TaNx(3 & 5 nm)/Ag(10 nm)/Si(3
nm)/glass at 300 oC annealing temperature, but no Ag diffusion happened at this temperature. It indicates that no outward diffusion of Ag
occurred during the annealing. The as deposited and annealed TaNx(1, 3 & 5 nm)/Ag(10 nm)/Si(3 nm)/glass films showed better transmittance
than Ag(10 nm)/glass films in the visible region. The optical data obtained here was in good agreement with simulated predictions.
Keywords: Low emissivity, multi-layers, optical properties, sputtering, thermal stability, ultrathin films.
Rights & PermissionsPrintExport