CFD Simulation of Chemical Vapor Deposition of Silicon Carbide in CH3SiCl3-H2 System
The CVD apparatus for the uniform coating of silicon carbide was suggested and realized into a 3-dimensional computer-aided
design (CAD) model. An experimental condition is simulated with a computational fluid dynamic program to obtain temperature and
flow distribution in the CVD chamber. The simulated temperature showed the very uniform distribution especially in the hot zone region
and that is thought to be the result of the design of the CVD apparatus. The temperature measured with a thermocouple showed the good
matching with the simulated one, which reflected the assumption and the boundary conditions during the simulation were plausible.
Keywords: Chemical vapor deposition, computational fluid dynamic, methyltrichlorosilane, modeling, silicon carbide, simulation, thermodynamic
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