Recent Progress in Semiconductor Properties Engineering by Ultrasonication
Rada K. Savkina
Affiliation: V. Lashkaryov Institute of Semiconductor Physics, prospect Nauki 41, 03028 Kiev, Ukraine.
This work presents review of the recent patents and applied researches in the field of ultrasonic processing of
the semiconductor materials and devices. The ultrasound demonstrates selective and, simultaneously, complex character
of the effect on semiconductors. In contrast to the thermal or light energy, uniformly absorbed over semiconductor volume,
the acoustic wave energy is mainly absorbed by the crystal lattice defects. The peculiarities of this interaction results
in practical applications of the ultrasonication of semiconductors for electronic properties design. It was shown that US
processing has found technological niche as supporting operation during ion implantation process and growth of semiconductors.
The use of an inhomogeneous stress and piezoelectric harmonic potential produced by surface acoustic waves in
low dimensional heterostructures to improves the efficiency of available optoelectronic and nanoelectronic devices as well
as create new ones. The phenomenon of acoustic cavitation that underlies at the basis of such technological processes as
cleaning and sonochemical synthesis is discussed separately.
Keywords: Acoustics cavitation, gettering effect, semiconductor devices, sonochemistry, ultrasound.
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