Ion Implantation and Activation

Ion Implantation and Activation

Volume: 1

Indexed in: EBSCO.

Ion Implantation and Activation presents the derivation process of related models in a comprehensive step by step manner starting from the fundamental processes and moving up into the more advanced ...
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Lateral Distribution

Pp. 266-301 (36)

Kunihiro Suzuki

Abstract

An analytical model with lateral straggling parameters was developed to describe the tilt dependence of ion-implantation profiles. There are three parameters associated with depth-dependent lateral straggling into the model. On the basis of comparison between experimental and analytical data, a database of ion-implantation profiles that includes lateral-straggling parameters have established. The data with tilt 0° were evaluated using off angle substrates.

Keywords:

Ion implantation, lateral straggling, effective gate length, short channel effects, MOSFETs, lateral penetration, lateral resolution, SIMS, tilt, tail function, Pearson function, Gaussian function, joined half Gauss, error function, amorphous layer, channeling.

Affiliation:

Fujitsu limited Minatoku kaigan 1-11-1 Tokyo Japan.