Ion Implantation and Activation

Ion Implantation and Activation

Volume: 1

Indexed in: EBSCO.

Ion Implantation and Activation presents the derivation process of related models in a comprehensive step by step manner starting from the fundamental processes and moving up into the more advanced ...
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Selection of Impurities

Pp. 3-7 (5)

Kunihiro Suzuki

Abstract

Various impurities are used in VLSI processes. The key factors for the selection of the impurities are their solid solubility and diffusion coefficient. B, As, P are commonly used as doping impurities due to their high solid solubility. In and Sb are sometimes used to realize shallow junctions due to their low diffusion coefficients. We briefly showwhere various impurities are used in two distinguished devices of bipolar transistors and MOS FET’s.

Keywords:

Solid solubility, diffusioncoefficient, boron, arsenic, phosphorous, antimony, indium, bipolar, MOS, emitter, base, collector, source, drain, gate, extension, pocket.

Affiliation:

Fujitsu limited Minatoku kaigan 1-11-1 Tokyo Japan.