We demonstrate a method to fabricate flexible field effect transistors based on mask-free inkjet printed silver micro-electrodes
and wet-transfer of chemical vapor deposition grown graphene. The process is simple, low-cost and repeatable. The transistor shows a
field-effect hole mobility of 33 cm2/Vs and on/off ratio of 2.1 with high drain current of 54 mA, which is the highest reported in air at
Keywords: Graphene, flexible electronics, field effect transistor, inkjet printing.
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