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Graphene-based Flexible Field Effect Transistor with Inkjet Printed Silver Electrodes

Author(s): Zhuo Wang, Andrew P. Cook, Xuesong Yang, Zhihong Liu, Qingkai Yu, Maggie Y. Chen.

Abstract:

We demonstrate a method to fabricate flexible field effect transistors based on mask-free inkjet printed silver micro-electrodes and wet-transfer of chemical vapor deposition grown graphene. The process is simple, low-cost and repeatable. The transistor shows a field-effect hole mobility of 33 cm2/Vs and on/off ratio of 2.1 with high drain current of 54 mA, which is the highest reported in air at room temperature.

Keywords: Graphene, flexible electronics, field effect transistor, inkjet printing.

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Article Details

VOLUME: 9
ISSUE: 5
Year: 2013
Page: [635 - 637]
Pages: 3
DOI: 10.2174/15734137113099990064
Price: $58