Self-Bonded Silicon Carbide Layer on Carbon Foil: Preparation and Properties
Sergey K. Brantov, Dmitry N. Borisenko, Ivan M. Shmytko and Edward A. Steinman
Affiliation: Institute of Solid State Physics RAS. Chernogolovka, Moscow District, 142432, Russia.
We suggest a method of growing silicon carbide crystal layers on carbon foil. The material is produced by moving a carbon foil tape at a speed up to 2.5 m/min in dynamic vacuum against a graphite capillary feeder that contains molten silicon. As a result of various chemical vapor reactions, SiC crystals grow at a speed up to 1.5 mm/s.. The crystals and the foil form a composite material with semiconducting properties. In this article, we have discussed relevant patents.
Keywords: CVD (chemical vapor deposition), graphite foil, nanocomposites, (PL) photoluminescence, semiconducting properties,
XRD (X-ray diffraction).
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