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Current Nanoscience

Editor-in-Chief

ISSN (Print): 1573-4137
ISSN (Online): 1875-6786

Temperature Dependence of Barrier Height and Performance Enhancement of Pentacene Based Organic Thin Film Transistor with Bi-Layer MoO3/Au Electrodes

Author(s): Mir Waqas Alam, Zhaokui Wang, Shigeki Naka and Hiroyuki Okada

Volume 9, Issue 3, 2013

Page: [407 - 410] Pages: 4

DOI: 10.2174/1573413711309030019

Price: $65

Abstract

We investigated top-contact pentacene-based organic thin-film transistor (OTFTs) with bi-layer MoO3/Au electrodes. The device performance including field effect mobility, threshold voltage, and On/Off ratio was highly improved in a device with 5 nm MoO3 layer which showed the highest field-effect mobility of 0.72 cm2 V-1s-1. In addition, from temperature dependence characteristics, we observed that the barrier height was dramatically decreased from 0.12 eV (without MoO3) to 0.03 eV in device with 5 nm MoO3 layer. This improved device performance was attributed to significant reduction in barrier height at Au/pentacene interfaces and surface roughness of pentacene layer after inserting a suitable MoO3 layer between pentacene and gold electrodes.

Keywords: Pentacene, Organic Thin film transistors, Semiconductors.


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